Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing-Reference-Cited by-同舟云学术

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Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing

Published:2024-08 Issue: Volume:664 Page:160255
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rezek Jiří^ORCID,Kučera Martin,Kozák Tomáš^ORCID,Čerstvý Radomír^ORCID,Franc Aleš^ORCID,Baroch Pavel^ORCID

Funder

Ministerstvo školství mládeže a tělovýchovy České republiky

Publisher

Elsevier BV

Reference33 articles.

1. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices;Shi;Adv. Mater.,2021

2. Design strategy for p-type transparent conducting oxides;Hu;J. Appl. Phys.,2020

3. Low resistivity of N-doped Cu2O thin films deposited by rf-magnetron sputtering;Lai;Appl. Surf. Sci.,2013

4. Novel boron-doped p-Type Cu2O thin films as a hole-selective contact in c-Si solar cells;Markose;ACS Appl. Mater. Interf.,2020

5. Deposition and characterization of lithium doped direct current magnetron sputtered Cu2O films;Nyborg;Thin Solid Films,2021

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1. Unlocking enhanced photocatalytic potential in copper oxide via Ti, Zn, and Fe based ternary copper (I) oxide: a density functional theory approach;Emergent Materials;2024-09-05

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