Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO-Reference-Cited by-同舟云学术

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Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO

Published:2024-07 Issue: Volume:661 Page:160070
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zha Shen Jie,Wu Shan,Shi Xiao Xia,Liu Gui Shan,Chen Xiong Jing,Ho Chun Yuen,Yu Kin Man,Liu Chao Ping

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference44 articles.

1. β-Gallium oxide power electronics;Green;APL Mater.,2022

2. Demonstration and analysis of ambipolar SnO inverter with high gain;Mashooq;Appl. Phys. Lett.,2023

3. A self-powered solar-blind photodetector based on polyaniline/α- Ga2O3 p-n heterojunction;Sun;Appl. Phys. Lett.,2021

4. Perspective on the band structure engineering and doping control of transparent conducting materials;Cai;Appl. Phys. Lett.,2021

5. An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics;Zhou;Nat. Commun.,2023

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