A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction-Reference-Cited by-同舟云学术

A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

Published:2021-10-04 Issue:14 Volume:119 Page:141601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun X. Y.¹^ORCID,Chen X. H.¹^ORCID,Hao J. G.¹,Wang Z. P.¹^ORCID,Xu Y.¹,Gong H. H.¹,Zhang Y. J.¹,Yu X. X.¹^ORCID,Zhang C. D.¹,Ren F.-F.¹²^ORCID,Gu S. L.¹,Zhang R.¹,Ye J. D.¹²^ORCID

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

2. Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China

Funder

The National Natural Science Foundation of China

The State Key R&D Project of Jiangsu Province

The State Key R&D Project of Guandong Province

Shenzhen Fundamental Research Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0059061

Reference42 articles.

1. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

2. Gallium oxide-based solar-blind ultraviolet photodetectors

3. Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals

4. Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures

5. Carrier Transport and Gain Mechanisms in $\beta$ –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

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