Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

Author:

Littlejohn Aaron J.,Yang Yunbo,Lu Zonghuan,Shin Eunsung,Pan KuanChang,Subramanyam Guru,Vasilyev Vladimir,Leedy Kevin,Quach Tony,Lu Toh-Ming,Wang Gwo-Ching

Funder

New York State Foundation of Science, Technology and Innovation (NYSTAR)

research collaboration program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. Radio frequency substrate biasing effects on the insulator-metal transition behavior of reactively sputtered VO2 films on sapphire (001);Azhan;J. Appl. Phys.,2015

2. Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures;Bayati;Acta Mater.,2013

3. Computation of the correlated metal-insulator transition in vanadium dioxide from first principles;Zheng;Phys. Rev. Lett.,2015

4. The stability study on vanadium dioxide;Li;Adv. Mater. Res.,2015

5. Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon;Viswanath;J. Appl. Phys.,2011

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