Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN-Reference-Cited by-同舟云学术

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Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN

Published:2012-02 Issue:8 Volume:258 Page:3565-3570
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Song Keun Man,Kim Jong Min,Kang Bong Kyun,Shin Chan Soo,Ko Chul Gi,Kong Bo Hyun,Cho Hyung Koun,Yoon Dae Ho,Kim Hogyoung,Hwang Sung Min

Funder

Ministry of Education, Science and Technology (MEST)

Ministry of Knowledge Economy (MKE)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. The Blue Laser Diode;Nakamura,1997

2. GaN: Processing, defects, and devices

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality nonpolara-plane GaN epitaxial films grown onr-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition;Japanese Journal of Applied Physics;2018-04-09

2. Structural properties and defects of GaN crystals grown at ultra-high pressures: A molecular dynamics simulation;Superlattices and Microstructures;2018-01

3. Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels;Journal of Crystal Growth;2013-05

4. Growth and characterization of a-plane (110) GaN films on (010) LiGaO2 substrate by chemical vapor deposition;Journal of Crystal Growth;2013-01

5. Optical Properties of Undoped $a$-Plane GaN Grown with Different Initial Growth Pressures;Japanese Journal of Applied Physics;2012-09-03

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