Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. One pot synthesis and characterization of ZnS nanoparticles in the mixed surfactant system;Materials Chemistry and Physics;2014-05
2. Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots;Journal of Luminescence;2013-05
3. InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots;Self-Assembly of Nanostructures;2011-09-20
4. Selective growth of InAs quantum dots on SiO2-masked GaAs;Journal of Nanophotonics;2009-10-01
5. Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach;Applied Physics Letters;2008-12-08
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