Author:
Palankovski V,Röhrer G,Grasser T,Smirnov S,Kosina H,Selberherr S
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Minimos-NT 2.0 User’s Guide, IμE, Institut für Mikroelektronik, Technische Universität Wien, Austria. http://www.iue.tuwien.ac.at/software/minimos-nt..
2. Simulation of power heterojunction bipolar transistors on gallium arsenide;Palankovski;IEEE Trans. Electron Dev.,2001
3. Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors;Eberhardt;Mater. Sci. Eng.,2002
4. Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performance;Palankovski;J. Phys. IV,1998
5. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus- and boron-doped silicon;Masetti;IEEE Trans. Electron Dev.,1983
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