Mechanism of Ge2Sb2Te5 chemical mechanical polishing

Author:

Wang Liangyong,Song Zhitang,Zhong Min,Liu Weili,Yan Weixia,Qin Fei,He Aodong,Liu Bo

Funder

National Integrate Circuit Research Program of China

Science and Technology Council of Shanghai

Chinese Academy of Sciences Visiting Professorship for Senior International Scientists

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells;Castro,2007

2. Chalcogenide PCM: a memory technology for next decade;Bez;IEEE IEDM Tech. Dig.,2009

3. The role of interfaces in damascene phase-change memory;Kencke,2007

4. Structure of phase change materials for data storage;Sun;Phys. Rev. Lett.,2006

5. Effect of abrasive material properties on polishing rate selectivity of nitrogen-doped Ge2Sb2Te5 to SiO2 film in chemical mechanical polishing;Park;J. Mater. Res.,2008

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