A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping-Reference-Cited by-同舟云学术

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

Published:2020-08 Issue: Volume:520 Page:146314
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Ji-Eun,Hwang Jinwoong,Kang Minhee,Joo Hyun-Jeong,Ryu Hyejin,Kim Kyoo,Kim Yongsam,Kim Namdong,Duong Anh Tuan,Cho Sunglae,Mo Sung-Kwan,Hwang Choongyu,Yang Imjeong Ho-Soon

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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4. Direct observation of interlayer hybridization and Dirac relativistic carriers in Graphene/MoS2 van der Waals heterostructures;Coy Diaz;Nano Lett.,2015

5. Atomically thin p-n junctions with van der Waals heterointerfaces;Lee;Nat. Nanotech.,2014

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