Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon-Reference-Cited by-同舟云学术

Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon

Published:2020-12 Issue: Volume:532 Page:147463
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kopani Martin,Mikula Milan,Kosnac Daniel,Kovac Jaroslav,Trnka Michal,Gregus Jan,Jerigova Monika,Jergel Matej,Vavrinsky Erik,Bacova Silvia,Zitto Peter,Polak Stefan,Pincik Emil

Funder

Slovak Research and Development Agency APVV

The Ministry of Education, Science, Research and Sport of the Slovak Republic VEGA

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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3. Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid;Theunissen;J. Electrochem. Soc.,1972

4. Pore formation mechanisms for the si-hf system;Charstensen;Mater. Sci. Engin. B,2000

5. An atomistic introduction to anisotropic etching;Gosalvez;J. Micromech. Microeng.,2007

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