Analysis of porous silicon structures using FTIR and Raman spectroscopy-Reference-Cited by-同舟云学术

Analysis of porous silicon structures using FTIR and Raman spectroscopy

Published:2023-06-01 Issue:3 Volume:74 Page:218-227
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Králik Martin¹,Kopani Martin²

Affiliation:

1. 1 Institute of Aurel Stodola, Faculty of Electrical Engineering and Information Technology , University of Zilina , Komenskeho 843, 031 01 Liptovsky Mikulas , Slovakia

2. 2 Institute of Medical Physics, Biophysics, Informatics and Telemedicine, Faculty of Medicine , Comenius University , Sasinkova 4, 811 08, Bratislava , Slovakia

Abstract

Abstract This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2023-0028

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