Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory-Reference-Cited by-同舟云学术

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Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

Published:2020-08 Issue: Volume:520 Page:146380
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Park Chul Jin,Kim Jin Whan,Namgung Seok Daniel,Kwon Jang-Yeon,Shin Moo Whan

Funder

MIST (Ministry of Science and ICT), Korea

IITP

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Overview of emerging nonvolatile memory technologies;Meena;Nanoscale Res. Lett.,2014

2. Oxide Nanomaterials and their Applications as a Memristor;Tripathi;Solid State Phenom.,2015

3. Status and prospects of ZnO-based resistive switching memory devices;Simanjuntak;Nanoscale Res. Lett.,2016

4. Zinc oxide thin films for memristive devices: a review, Critical Reviews in Solid State and Materials;Laurenti;Sciences.,2017

5. Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor;Sun;Nano Res.,2016

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2. Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory;Advanced Biology;2023-01-17

3. UV-laser annealing for improved resistive switching performance and reliability of flexible resistive random-access memory;Journal of Alloys and Compounds;2022-07

4. Optical properties and bipolar resistive switching of ZnO thin films deposited via DC magnetron sputtering;Chinese Journal of Physics;2021-12

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