Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory

Abstract

AbstractA one‐selector one resistor (1S1R) array formed of a selector and resistive random access memory (RRAM) is an important way to achieve high‐density storage and neuromorphic computing. However, the low durability and poor consistency of the selector limit its practical application. The fabrication of a selector based on egg albumen (EA) is reported in this paper. The device exhibits excellent bidirectional threshold switching characteristics, including a low leakage current (10−7 A), a high ON/OFF current ratio (106), and good endurance (>700 days). It is used as a selector to form a 1S1R unit in combination with an EA‐based RRAM to effectively solve the leakage current in a crossbar array. A feasible solution is provided for the realization of a protein‐based 1S1R array to achieve high‐density storage. The 1S1R unit shows characteristics similar to those of synapses in the human brain under impulse excitation and has great potential in simulating the human brain for neuromorphic calculations.)