Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications

Author:

Suárez-Campos G.,Cabrera-German D.,Castelo-González A.O.,Avila-Avendano C.,Fuentes Ríos J.L.,Quevedo-López M.A.,Aceves R.,Hu H.,Sotelo-Lerma M.

Funder

Mexican Consejo Nacional de Ciencia y Tecnología

PAPIIT-UNAM

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference49 articles.

1. Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal processing;Lei;Appl. Phys. Lett.,2011

2. Ultrathin Al2O3 passivation layer-wrapped Ag@TiO2 nanorods by atomic layer deposition for enhanced photoelectrochemical performance;Gao;Appl. Surf. Sci.,2019

3. Semiconductor TiO2-Al2O3 thin film gas sensors derived from aqueous particulate sol-gel process;Mohammadi;Mater. Sci. Semicond. Process.,2014

4. Interface modification via Al 2 O 3 with retarded charge recombinations for mesoscopic perovskite solar cells fabricated with spray deposition process in the air;Liang;Appl. Surf. Sci.,2019

5. Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors;Baek;Org. Electron. Physics, Mater. Appl. 28,2016

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