Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire-Reference-Cited by-同舟云学术

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Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire

Published:2020-05 Issue: Volume:513 Page:145871
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hao J.G.,Ma T.C.,Chen X.H.,Kuang Y.,Li L.,Li J.,Ren F.-F.,Gu S.L.,Tan H.H.,Jagadish C.,Ye J.D.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Recent progress in the growth of β-Ga2O3 for power electronics applications;Baldini;Mat. Sci. Semicon. Proc.,2018

2. Review of gallium-oxide-based solar-blind ultraviolet photodetectors;Chen;Photonics Res.,2019

3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes;Hwang;Appl. Phys. Lett.,2014

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

5. Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors;Hu;Appl. Phys. Lett.,2018

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1. High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by mist chemical vapor deposition;Journal of Alloys and Compounds;2024-10

2. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

3. Temperature-dependent epitaxial evolution of carbon-free corundum α-Ga₂O₃ on sapphire;Journal of Physics D: Applied Physics;2024-06-04

4. Effect of tin source temperature on the β-Ga2O3 film deposited by MOCVD;Materials Science and Engineering: B;2024-04

5. Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy;Materials Today Communications;2024-03

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