Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface-Reference-Cited by-同舟云学术

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Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

Published:2016-11 Issue: Volume:385 Page:318-323
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Guerrero-Sánchez J.,Takeuchi Noboru

Funder

DGAPA project

Conacyt Project

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Toward atomic-scale device fabrication in silicon using scanning probe microscopy;Ruess;Nano Lett.,2004

2. Self-Assembled Single Atom Wide Metal Lines on Si(001) Surfaces, in Atomic and Molecular Wires;Nogami,1997

3. Aluminum on the Si(100) surface: growth of the first monolayer;Nogami;Phys. Rev. B,1991

4. Indium-induced reconstructions of the Si(100) surface;Baski;Phys. Rev. B,1991

5. Initial stage growth of In and A1 on a single-domain Si(001)-(2×1) surface;Yeom;Surf. Sci.,1995

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles prediction of one-dimensional giant Rashba splittings in Bi-adsorbed In atomic chains;Physical Review B;2018-12-18

2. Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition;Applied Surface Science;2018-11

3. Formation of indium arsenide atomic wires on the In/Si(111)-4 × 1 surface;Superlattices and Microstructures;2017-03

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