Investigation of the effect of different cleaning forces on Ce-O-Si bonding during oxide post-CMP cleaning-Reference-Cited by-同舟云学术

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Investigation of the effect of different cleaning forces on Ce-O-Si bonding during oxide post-CMP cleaning

Published:2021-04 Issue: Volume:545 Page:149035
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sahir Samrina,Yerriboina Nagendra Prasad,Han So-Young,Han Kwang-Min,Kim Tae-Gon,Mahadev Niraj,Park Jin-Goo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Particle technology in chemical mechanical planarization;Gokhale;KONA,2007

2. Moore's law: past, present, and future;Schaller;IEEE Spectr.,1997

3. Perspective—electrochemical assessment of slurry formulations for chemical mechanical planarization of metals: trends, benefits and challenges;Roy;ECS J. Solid State Sci. Technol.,2018

4. Enhanced open innovation: CMP innovation to open new paradigm;Tsujimura;ECS J. Solid State Sci. Technol.,2019

5. Minimization of chemical-mechanical planarization (CMP) defects and post CMP cleaning;Zhang;J. Vac. Sci. Technol., B,1999

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