Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces-Reference-Cited by-同舟云学术

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Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

Published:2021-07 Issue: Volume:555 Page:149516
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kolodziej Jacek J.,Wutke Dawid,Lis Jakub,Olszowska Natalia

Funder

Narodowe Centrum Nauki

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference52 articles.

1. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

2. Field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts

3. Efficient terahertz devices based on III–V semiconductor photoconductors

4. An Ultrafast Switchable Terahertz Polarization Modulator Based on III–V Semiconductor Nanowires

5. III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D electron gas formation on InAs wurtzite nanosheet surfaces;Applied Physics Letters;2024-04-08

2. Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film;Journal of Alloys and Compounds;2024-01

3. Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type;Applied Surface Science Advances;2022-12

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