Origin of an unintended increase in carrier density of ternary cation-based amorphous oxide semiconductors-Reference-Cited by-同舟云学术

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Origin of an unintended increase in carrier density of ternary cation-based amorphous oxide semiconductors

Published:2021-08 Issue: Volume:556 Page:149676
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Mingyuan,Wang Xingyu,Wook Song Han,Kim Hyeonghun,Clevenger Michael,Ko Dong-Kyun,No Kwangsoo,Lee Sunghwan

Funder

Purdue Research Foundation

National Research Foundation of Korea

NSF ECCS

KRISS

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference53 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Metallization selection and the performance of amorphous In-Zn-O thin film transistors;Lee;Appl. Phys. Lett.,2014

3. Transparent conducting oxides for photovoltaics;Fortunato;MRS Bull.,2007

4. 13.03 - Review of Recent Developments in Sensing Materials;Venkatanarayanan,2014

5. Indium Tin Oxide Nanowire Networks as Effective UV/Vis Photodetection Platforms;Zhao;J. Phys. Chem. C,2015

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1. Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage;Applied Physics Letters;2024-02-26

2. The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors;Journal of Electronic Materials;2022-02-06

3. Influence of annealing temperature on the optoelectronic properties of ITZO thin films;Nanotechnology;2021-07-12

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