Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks-Reference-Cited by-同舟云学术

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Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks

Published:2013-11 Issue: Volume:285 Page:772-777
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yang Guofeng,Guo Ying,Zhu Huaxin,Yan Dawei,Li Guohua,Gao Shumei,Dong Kexiu

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes;Nakamura;Science,1998

2. Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length;Vitusevich;Applied Physics Letters,2005

3. Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces;Yang;Applied Physics Letters,2008

4. One-dimensional nanostructures: synthesis, characterization, and applications;Xia;Advanced Materials,2003

5. Synthesis of GaN–carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere;Han;Applied Physics Letters,2000

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2. 3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective;Nanoscale Advances;2021

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4. Insights on the enhanced Raman scattering of monolayer TMDCs (Mo, W)(S, Se)2 with Ag nanoparticles via rapid thermal annealing;Applied Surface Science;2020-08

5. Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology;Journal of Vacuum Science & Technology B;2020-07

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