Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology-Reference-Cited by-同舟云学术

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Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Published:2020-07 Issue:4 Volume:38 Page:042802
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Ekielski Marek¹,Wzorek Marek¹,Gołaszewska Krystyna¹,Domanowska Alina²,Taube Andrzej¹,Sochacki Mariusz³

Affiliation:

1. Łukasiewicz Research Network-Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland

2. Institute of Physics, Silesian University of Technology, ul. Konarskiego 22B, 44-100 Gliwice, Poland

3. Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, ul. Koszykowa 75, 00-662 Warsaw, Poland

Funder

Polish National Science Center

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000133

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of Y₂O₃ Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching;Journal of Inorganic Materials;2024

2. Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching;Journal of Vacuum Science & Technology A;2021-09

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