Energy-band alignment of (HfO 2 ) x (Al 2 O 3 ) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201)-Reference-Cited by-同舟云学术

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Energy-band alignment of (HfO 2 ) x (Al 2 O 3 ) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201)

Published:2018-03 Issue: Volume:433 Page:530-534
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yuan Lei,Zhang Hongpeng,Jia Renxu,Guo Lixin,Zhang Yimen,Zhang Yuming

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanxi New-star Plan of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

4. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

5. Czochralski growth and characterization of β-Ga2O3 single crystals

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