Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing-Reference-Cited by-同舟云学术

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Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing

Published:2018-03 Issue: Volume:434 Page:40-48
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Deng Hui,Liu Nian,Endo Katsuyoshi,Yamamura Kazuya

Funder

Adaptable and Seamless Technology Transfer Program through Target driven R&D, JST

Ministry of Education, Culture, Sports, Science and Technology, Japan

Kansai research foundation for technology promotion

Osawa scientific studies grants foundation

JSPS

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

3. Mechanochemical polishing of silicon carbide single crystal with chromium (III) oxide abrasive;Kikuchi;J. Am. Ceram. Soc.,1992

4. Chemomechanical polishing of silicon carbide;Zhou;J. Electrochem. Soc.,1997

5. Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing;Deng;Appl. Phys. Lett.,2013

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