Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment-Reference-Cited by-同舟云学术

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Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment

Published:2017-11 Issue: Volume:422 Page:452-455
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kuroshima Hiroki,Makino Toshiharu,Yamasaki Satoshi,Matsumoto Tsubasa,Inokuma Takao,Tokuda Norio

Funder

JSPS KAKENHI

Adaptable and Seamless Technology Transfer Program through target-driven R&D

Kanazawa University SAKIGAKE

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. 1 Ω on-resistance diamond vertical-Schottky barrier diode operated at 250°C;Umezawa;Appl. Phys. Express,2013

2. High-voltage vacuum switch with a diamond p–i–n diode using negative electron affinity;Takeuchi;Jpn. J. Appl. Phys.,2012

3. Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors;Liao;Phys. Rev. B,2008

4. High-efficiency excitonic emission with deep-ultraviolet light from (001)-oriented diamond p–i–n junction;Makino;Jpn. J. Appl. Phys.,2006

5. Ultraviolet emission from a diamond pn junction;Koizumi;Science,2001

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