High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity-Reference-Cited by-同舟云学术

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High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity

Published:2012-08-09 Issue: Volume:51 Page:090113
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeuchi Daisuke,Makino Toshiharu,Kato Hiromitsu,Ogura Masahiko,Okushi Hideyo,Ohashi Hiromichi,Yamasaki Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthetic pathway of shallow n-type donor: Theoretical study of Li and B co-doped diamonds;Diamond and Related Materials;2024-01

2. Theoretical study of n-type diamond with Li doping and Li-B co-doping: A density functional simulation;Diamond and Related Materials;2023-01

3. Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode;IEEE Transactions on Electron Devices;2022-08

4. First-principles calculation to N-type Li N Co-doping and Li doping in diamond;Diamond and Related Materials;2020-12

5. n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation;Applied Physics A;2020-10-21

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