Strain sensitivity in the nitrogen 1 s NEXAFS spectra of gallium nitride-Reference-Cited by-同舟云学术

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Strain sensitivity in the nitrogen 1 s NEXAFS spectra of gallium nitride

Published:2014-10 Issue: Volume:316 Page:232-236
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ritchie Andrew,Eger Shaylin,Wright Chelsey,Chelladurai Daniel,Borrowman Cuyler,Olovsson Weine,Magnuson Martin,Verma Jai,Jena Debdeep,Xing Huili Grace,Dubuc Christian,Urquhart Stephen^ORCID

Funder

NSERC

NRC

CIHR

Province of Saskatchewan

WED

University of Saskatchewan

University of Wisconsin–Madison

Swedish Research Council

National Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Recent Progress in GaN-Based Light-Emitting Diodes

3. Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

5. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface bonding of Zr1−xAlxN nanocomposites investigated by x-ray spectroscopies and first principles calculations;Physical Review Research;2020-03-17

2. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

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