Investigation of H 2 /CH 4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells-Reference-Cited by-同舟云学术

Investigation of H 2 /CH 4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells

Published:2014-10 Issue: Volume:316 Page:508-514
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang Li,Zhang Xiaodan,Zhao Ying,Yamada Takuto,Naito Yusuke

Funder

National Basic Research Program of China

National Natural Science Foundation of China

National High Technology and Development Research Program of China

Tianjin Science and Technology Support Program

Major Science and Technology Support Project of Tianjin City

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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