Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants-Reference-Cited by-同舟云学术

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Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants

Published:2006-07 Issue:19 Volume:252 Page:7214-7217
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Giubertoni D.,Bersani M.,Barozzi M.,Pederzoli S.,Iacob E.,van den Berg J.A.,Werner M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Errors in near-surface and interfacial profiling of boron and arsenic

2. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

3. Ultra-low energy SIMS analysis of boron deltas in silicon

4. Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

5. Proceedings of the 2003 International Conference on Characterization and Metrology for ULSI Technology, AIP Conf. Proc., vol. 683;Anderle,2003

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1. Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation;Applied Physics Letters;2015-01-05

2. An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results;Ultramicroscopy;2014-06

3. Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques;Surface and Interface Analysis;2012-03-27

4. Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

5. Advanced SIMS quantification in the first few nm of B, P and As ultrashallow implants;Surface and Interface Analysis;2010-06-08

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