Comparative study on the nanomechanical behavior and physical properties influenced by the epitaxial growth mechanisms of GaN thin films-Reference-Cited by-同舟云学术

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Comparative study on the nanomechanical behavior and physical properties influenced by the epitaxial growth mechanisms of GaN thin films

Published:2022-03 Issue: Volume:579 Page:152188
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Boughrara Najla,Benzarti Zohra,Khalfallah Ali,Evaristo Manuel,Cavaleiro Albano

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference69 articles.

1. High-power gan p-n junction blue-light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1991

2. Effect of SiN Treatment on Optical Properties of InxGa1−xN/GaN MQW Blue LEDs;Benzarti;J. Electron. Mater.,2017

3. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions;Akyol;Appl. Phys. Express.,2015

4. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure;Li;Chin. Phys. B.,2017

5. Silicon effect on GaN surface morphology;Benzarti;Microelectronics J.,2002

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2. Identification of Elastoplastic Constitutive Model of GaN Thin Films Using Instrumented Nanoindentation and Machine Learning Technique;Coatings;2024-05-31

3. Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates;Electronics;2024-05-30

4. Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation;Materials Today Communications;2024-03

5. Crystallographic Orientation and Strain in GaN Crystals Grown on 6H-SiC and Sapphire Substrates;Crystals;2023-12-16

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