Formation of the Si/Ti interface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference30 articles.
1. The room temperature growth of Ti on sputter-cleaned Si(100): Composition and nanostructure of the interface
2. Structural morphology and electronic properties of the Si-Cr interface
3. Si-Cr and Si-Pd interface reaction and bulk electronic structure of Ti, V, Cr, Co, Ni, and Pd silicides
4. Chemical reaction and Schottky-barrier formation at V/Si interfaces
5. Quantitative model of reactive metal-semiconductor interface growth using high-resolution photoemission results
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1. Inhibiting low-dimensional defects of titanium diboride coatings by Si incorporation: Toward enhanced corrosion resistance and mechanical properties;Applied Surface Science;2022-08
2. Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching;Japanese Journal of Applied Physics;2019-02-01
3. Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications;Scripta Materialia;2016-07
4. Growth of Ti–O–Si mixed oxides by reactive ion-beam mixing of Ti/Si interfaces;Journal of Physics D: Applied Physics;2013-12-05
5. Low-temperature electrical characterization of the Ti–Si(100) interface at the p-Si/SiGe/Si–Ti structure using Hall measurement analysis;Physica Scripta;2013-07-03
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