Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. III-Nitride Semiconductors, Optical Properties;Zavada,2002
2. Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films
3. Photoluminescence of Eu-doped GaN thin films prepared by radio frequency magnetron sputtering
4. Preparation and structural properties for GaN films grown on Si (1 1 1) by annealing
5. Formation of high quality gallium nitride thin films on Ga-diffused Si(1 1 1) substrate
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