Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser-Reference-Cited by-同舟云学术

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Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Published:2005-07 Issue:1-4 Volume:248 Page:461-465
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Conde J.C.,González P.,Lusquiños F.,Chiussi S.,Serra J.,León B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Excimer Lasers;Laude,1994

2. Pulsed Laser Deposition of Thin Films,1994

3. Laser Ablation and Desorption;Miller,1998

4. All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

5. A thermal description of the melting of c- and a-silicon under pulsed excimer lasers

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1. Study on damage of MgF₂ window irradiated by 193nm ultraviolet excimer laser;PROC SPIE;2021

2. Time-dependent nonlinear finite element modeling of the elastic and plastic deformation in SiGe heterostructured nanomaterials;Journal of Applied Physics;2017-01-14

3. Numerical and experimental study of the Ti6Al4V macrostructure obtained by Nd:YAG laser;Applied Physics B;2013-07-23

4. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers;Thin Solid Films;2013-06

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