Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony-Reference-Cited by-同舟云学术

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Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

Published:2011-08 Issue:21 Volume:257 Page:8784-8787
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chiang C.H.,Wu Y.H.,Hsieh M.C.,Yang C.H.,Wang J.F.,Chen Ross C.C.,Chang L.,Chen J.F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

4. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)

5. Multidimensional quantum well laser and temperature dependence of its threshold current

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1. Dilational Rheology of Extended Surfactants at the Air/Water and Oil/Water Interfaces: Effect of Propylene Oxide Group Numbers;Langmuir;2023-09-07

2. Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures;Optical Materials;2022-12

3. Surfactant-mediated Stranski-Krastanov islands;physica status solidi (b);2013-05-13

4. In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface;Journal of Crystal Growth;2013-05

5. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure;Nanotechnology;2013-01-28

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