Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals-Reference-Cited by-同舟云学术

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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

Published:2014-01 Issue: Volume:289 Page:332-337
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Xiao-Jie^ORCID,Zhu Lin,Gao Mo-Yun,Li Xue-Fei,Cao Zheng-Yi^ORCID,Zhai Hai-Fa,Li Ai-Dong,Wu Di

Funder

Natural Science Foundation of China

State Key Program for Basic Research of China

Fundamental Research Funds for the Central Universitees

Fund of Ministry of Education of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. A Floating Gate and Its Application to Memory Devices

2. A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed

3. A silicon nanocrystals based memory

4. Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications

5. Metal nanocrystal memories. I. Device design and fabrication

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