Numerical analysis of Excimer laser assisted processing of multi-layers for the tailored dehydrogenation of amorphous and nano-crystalline silicon films-Reference-Cited by-同舟云学术

Numerical analysis of Excimer laser assisted processing of multi-layers for the tailored dehydrogenation of amorphous and nano-crystalline silicon films

Published:2007-12 Issue:4 Volume:254 Page:898-903
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fornarini L.,Conde J.C.,Chiussi S.,Gontad F.,Leon B.,Martelli S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Laser hydriding of crystalline and amorphous silicon

2. Laser Hydriding?a Novel Method to Store Hydrogen in Solids

3. Explanation of the limiting thickness observed in low-temperature silicon epitaxy

4. Low temperature kinetics of Si(100) MBE growth

5. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

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1. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers;Thin Solid Films;2013-06

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3. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures;Applied Physics Letters;2010-07-05

4. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100);Thin Solid Films;2010-02

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