Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma-Reference-Cited by-同舟云学术

Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

Published:2015-12 Issue: Volume:357 Page:672-677
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Han Jeong Hwan,Lee Byoung Kook,Jung Eun Ae,Kim Hyo-Suk,Kim Seong Jun,Kim Chang Gyoun,Chung Taek-Mo,An Ki-Seok

Funder

NST (National Research Council of Science & Technology) of Republic of Korea

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

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4. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

5. Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

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1. Atomic layer deposition of conductive and semiconductive oxides;Applied Physics Reviews;2022-12

2. Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition;Ceramics International;2021-08

3. Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition;Ceramics International;2020-06

4. High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition;ACS Applied Materials & Interfaces;2019-04-04

5. Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review;Chemistry of Materials;2018-12-10