Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications-Reference-Cited by-同舟云学术

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Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

Published:2016-12 Issue: Volume:389 Page:835-839
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Singh S.D.,Nand Mangla,Ajimsha R.S.,Upadhyay Anuj,Kamparath Rajiv,Mukherjee C.,Misra P.,Sinha A.K.,Jha S.N.,Ganguli Tapas

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

2. Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes

3. Transparent p-type epitaxial thin films of nickel oxide

4. Zn0.9Mg0.1O∕ZnOp–n junctions grown by pulsed-laser deposition

5. Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of laser energy on optoelectronic properties of NiO NPs/Si heterojunction based on NiO NPs prepared by laser ablation in liquid;AIP Conference Proceedings;2024

2. Metal oxide heterostructure-based light-emitting diodes;Metal Oxide-Based Heterostructures;2023

3. X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg 2 Si and SiO 2 /Mg 2 Si heterojunctions;Surface and Interface Analysis;2021-07-16

4. Influence of laser energy on the optoelectronic properties of NiO/Si heterojunction;Journal of Physics: Conference Series;2021-03-01

5. Effect of germanium auto-diffusion on the bond lengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy;Journal of Synchrotron Radiation;2021-01-28

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