Influence of laser energy on the optoelectronic properties of NiO/Si heterojunction

Abstract

Abstract In the current work, NiONPs/Si Heterojunction Photodetector was fabricated using a drop-casting method of the Nickel Oxide (NiO) nanomaterial (produced by laser ablation in the water) on silicon (Si) substrate. The impact of laser energy on the preparation of NiO nanoparticles was investigated. The shape of the NiO NPs was a quasi-spherical particle with average particles size 16, 20, and 24 nm with high aggregations. The bandgap was direct and varying from 3.8 to 3.6 eV; relies on the laser energy. The current-voltage characteristics of NiO/Si heterostructure photodetector have a good rectifying property with suitable high spectral responsivity at the UV region, which found that the best value is 0.8 A/W @ 330 nm for a sample produced at 700mJ.