Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering-Reference-Cited by-同舟云学术

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Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering

Published:2005-05 Issue:1-4 Volume:245 Page:391-399
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu F.S.,Ma W.J.,Liu Q.L.,Liang J.K.,Luo J.,Yang L.T.,Song G.B.,Zhang Y.,Rao G.H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

2. Photoluminescence spectroscopy of erbium implanted gallium nitride

3. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

4. Green electroluminescence from Er-doped GaN Schottky barrier diodes

5. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

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1. Growth of bulk AlN crystals;Reference Module in Materials Science and Materials Engineering;2023

2. Synthesis, and photoluminescence and magnetic properties of Tb-doped AlN single-crystalline nanobelts;Journal of Luminescence;2021-08

3. Silicon interface passivation studied by modulated surface photovoltage spectroscopy;Journal of Physics: Conference Series;2021-03-01

4. Excitation mechanism of Tb3+ in a-Si3N4:H under sub-gap excitation;Journal of Luminescence;2018-10

5. A simple method to prepare Ln(OH)3 (Ln=La, Sm, Tb, Eu, and Gd) nanorods using CTAB micelle solution and their room temperature photoluminescence properties;Journal of Alloys and Compounds;2011-02

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