Structural defects in SiO2/SiC interface probed by a slow positron beam-Reference-Cited by-同舟云学术

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Structural defects in SiO2/SiC interface probed by a slow positron beam

Published:2005-05 Issue:1-4 Volume:244 Page:322-325
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Maekawa M.,Kawasuso A.,Chen Z.Q.,Yoshikawa M.,Suzuki R.,Ohdaira T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Properties of Silicon Carbide;Harris,1995

2. Oxidation of Silicon Carbide: Problems and Solutions

3. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing

4. Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry

5. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

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1. The evolution of nano-precursors at film-substrate interface under nanosecond laser irradiation;Optics & Laser Technology;2022-07

2. High-heat flux Cu-0.8Y alloys investigated by positron annihilation spectroscopy;Journal of Alloys and Compounds;2022-04

3. Optimization of thermal oxidation for 4H-SiC and fabricate/characterize MOS capacitor;IOP Conference Series: Materials Science and Engineering;2021-03-01

4. Investigation on the laser ablation of SiC ceramics using micro‐Raman mapping technique;Journal of Advanced Ceramics;2016-08-21

5. Experimental analysis of I‐V and C‐V characteristics of Ni/SiO2/4H‐SiC system with varying oxide thickness;Microelectronics International;2010-05-11

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