Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

Published:2006-12 Issue:5 Volume:253 Page:2452-2455
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhao D.G.,Liu Z.S.,Zhu J.J.,Zhang S.M.,Jiang D.S.,Yang Hui,Liang J.W.,Li X.Y.,Gong H.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. A reaction-transport model for AlGaN MOVPE growth

2. Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

3. Surface morphology of AlN buffer layer and its effect on GaN growthby metalorganic chemical vapor deposition

4. The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

5. High-quality and crack-free AlxGa1−xN (x∼0.2) grown on sapphire by a two-step growth method

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1. Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition;physica status solidi (a);2024-05-19

2. Enhanced structural and optical properties of high Al composition non-polar a-plane AlGaN epitaxial layer by optimizing growth flow sequence;Journal of Materials Science: Materials in Electronics;2023-07-31

3. Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition;Crystal Growth & Design;2023-01-05

4. Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films;Materials Science in Semiconductor Processing;2022-11

5. Investigation of carrier gas on morphological and structural characteristics of AlGaN/GaN HEMT;Materials Research Bulletin;2022-09

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