Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference19 articles.
1. Growth of Cu films on hydrogen-terminated Si(100) and Si(111) surfaces;Demczyk;Journal of Applied Physics,1994
2. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures;Chang;Journal of Applied Physics,1990
3. Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: inplane epitaxial relation and channeling analysis;Chang;Applied Physics Letters,1990
4. Epitaxial growth of Cu on Si by magnetron sputtering;Jiang;Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films,1998
5. Molecular dynamic simulation for Cu cluster deposition on Si substrate;Hwang;Computational Materials Science,2012
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