Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution-Reference-Cited by-同舟云学术

Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution

Published:2018-05 Issue: Volume:439 Page:282-284
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gouralnik A.S.,Maslov A.M.,Ustinov A. Yu.,Dotsenko S.A.,Shevlyagin A.V.,Chernev I.M.,Il'yashenko V.M.,Kitan S.A.,Koblova E.A.,Galkin K.N.,Galkin N.G.,Gerasimenko A.V.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion

2. Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients

3. The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method

4. SemiconductingMg2Si thin films prepared by molecular-beam epitaxy

5. Preparation and Electrical Property of Mg₂Si Thin Film by Pulsed Laser Deposition

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