A promising experimental paradigm and mechanism of Mg2Si UHV growth on a non-uniformly heated Si(111) sample
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. Epitaxial silicide formation in the Mg/Si(111) system
2. SemiconductingMg2Si thin films prepared by molecular-beam epitaxy
3. Growth of magnesium silicide thin films on Si(100), Si(111) and SOI substrates during rapid thermal processing
4. In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates
5. Growth condition dependence of structural and electrical properties of Mg2Si layers grown on silicon substrates
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1. Thick p-type Mg2Si film on Si: Growth, structure and transport properties;Journal of Alloys and Compounds;2023-11
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