Analysis of high-k HfO2 and HfSiO4 dielectric films-Reference-Cited by-同舟云学术

Analysis of high-k HfO2 and HfSiO4 dielectric films

Published:2004-06 Issue: Volume:231-232 Page:556-560
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nieveen W.,Schueler B.W.,Goodman G.,Schnabel P.,Moskito J.,Mowat I.,Chao G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference3 articles.

1. C. Gondran, J. Bennett, M. Beebe, in: Proceedings of the 49th AVS Symposium on Sputtering Artifacts in Depth Profile Analysis of HfO2 and HfSixOy, Denver, 2002.

2. T. Conard, C. Huyghebaert, W. Vandervorst, (TOF-) SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape, this proceedings.

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