Interfacial engineering of ZrO<sub>2</sub> metal-insulator-metal capacitor using Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> buffer layer for improved leakage properties-Reference-Cited by-同舟云学术

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Interfacial engineering of ZrO₂ metal-insulator-metal capacitor using Al₂O₃/TiO₂ buffer layer for improved leakage properties

Published:2022-07-03 Issue:3 Volume:10 Page:649-659
ISSN:2187-0764
Container-title:Journal of Asian Ceramic Societies
language:en
Short-container-title:Journal of Asian Ceramic Societies

Author:

Shin Heecheol¹,Choi Hyobin¹,Lim Jaeseong¹,Lee Wanggon¹,Mohit Kumar¹,Kim Younsoo²,Jung Hyung-Suk²,Lim Hanjin²,Seo Hyungtak¹³^ORCID

Affiliation:

1. Department of Energy Systems Research, Ajou University, Suwon, Republic of Korea

2. Process Development, Semiconductor R&D Center, Samsung Electronics, Samsungeonja-ro, Hwasung-si, Repulic of Korea

3. Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea

Funder

Samsung Electronics Co., Ltd

Publisher

Informa UK Limited

Subject

Ceramics and Composites

Link

https://www.tandfonline.com/doi/pdf/10.1080/21870764.2022.2101216

Reference67 articles.

1. The Internet of Things (IoT): Applications, investments, and challenges for enterprises

2. The Internet of Things: A survey

3. Research Priorities for Robust and Beneficial Artificial Intelligence

4. An experimental study of data retention behavior in modern DRAM devices

5. Prospective of Semiconductor Memory Devices: from Memory System to Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial layer suppression in ZrO2/TiN stack structured capacitors via atomic layer deposition;Ceramics International;2024-09

2. A new method for characterizing the atomic composition distribution and interface structure of ultrathin multilayer films using molecular dynamics simulation assisted ARXPS;Applied Surface Science;2024-08

3. New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition;Surfaces and Interfaces;2024-03

4. Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO₂ Insulators;IEEE Transactions on Electron Devices;2023-06

5. Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor;Applied Surface Science;2023-05

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