Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Published:2004-06 Issue:1-4 Volume:233 Page:91-98
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cheng Jin-Bo,Li Ai-Dong,Shao Qi-Yue,Ling Hui-Qin,Wu Di,Wang Yuan,Bao Yong-Jun,Wang Mu,Liu Zhi-Guo,Ming Nai-Ben

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, USA, 2001.

2. Scaling the gate dielectric: Materials, integration, and reliability

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

5. Thermodynamic stability of binary oxides in contact with silicon

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