High performance photodiode based on MoS2/pentacene heterojunction-Reference-Cited by-同舟云学术

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High performance photodiode based on MoS2/pentacene heterojunction

Published:2018-11 Issue: Volume:459 Page:179-184
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Peng Yingquan,Ding Rongzheng,Ren Qiang,Xu Sunan,Sun Lei,Wang Ying,Lu Feiping

Funder

National Key R&D Program of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference51 articles.

1. Low dark current inverted organic photodiodes using anionic polyelectrolyte as a cathode interlayer;Yoon;Appl. Phys. Lett.,2017

2. Inkjet printed polymeric electron blocking and surface energy modifying layer for low dark current organic photodetectors;Grimoldi;Org. Electron.,2016

3. Ambipolar pentacene field-effect transistors and inverters;Schön;Science,2000

4. Effects of film microstructure on the bias stability of pentacene field-effect transistors;Kim;Org. Electron.,2016

5. Light emitting field-effect transistors with vertical heterojunctions based on pentacene and tris-(8-hydroxyquinolinato) aluminum;Cui;Org. Electron.,2015

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1. Advances in Few-Layered Nanoscale Transition Metal Dichalcogenides in Sensing Application;Advanced Structured Materials;2024

2. Self-Driven and Blue-Enhanced Photodetectors Based on Organic/Inorganic Heterojunction of Pentacene and Bi₂Se₃;ACS Applied Nano Materials;2023-12-30

3. Exciton Dissociation, Charge Transfer, and Exciton Trapping at the MoS₂/Organic Semiconductor Interface;The Journal of Physical Chemistry C;2023-05-31

4. Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes;Vacuum;2022-12

5. Towards high performance near infrared sensitive multilayer organic phototransistors: effects of the acceptor and its position;Semiconductor Science and Technology;2022-06-06

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