Exciton Dissociation, Charge Transfer, and Exciton Trapping at the MoS<sub>2</sub>/Organic Semiconductor Interface-Reference-Cited by-同舟云学术

Exciton Dissociation, Charge Transfer, and Exciton Trapping at the MoS₂/Organic Semiconductor Interface

Published:2023-05-31 Issue:23 Volume:127 Page:11260-11267
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

de Clercq Damon M.¹²^ORCID,Yang Jiong²^ORCID,Hanif Muhammad³,Alves Jessica¹,Feng Jiale¹,Nielsen Michael P.³^ORCID,Kalantar-Zadeh Kourosh²⁴^ORCID,Schmidt Timothy W.¹^ORCID

Affiliation:

1. ARC Centre of Excellence in Exciton Science, School of Chemistry, UNSW Sydney, Sydney, New South Wales 2052, Australia

2. School of Chemical Engineering, UNSW Sydney, Sydney, New South Wales 2052, Australia

3. School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, Sydney, New South Wales 2052, Australia

4. School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia

Funder

Centre of Excellence in Future Low-Energy Electronics Technologies, Australian Research Council

Australian Government

Centre of Excellence in Exciton Science

University of New South Wales

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c01682

Reference45 articles.

1. Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse

2. Monolayer MoS2 Heterojunction Solar Cells

3. Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

4. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition

5. Nanoscale flexible organic thin-film transistors

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