Formation of self-assembled quantum dots induced by the Stranski–Krastanow transition: a comparison of various semiconductor systems
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference52 articles.
1. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth
2. See for example J.M. Gérard, in this issue
3. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
4. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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